2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-6-4]Schottky-Barrier Height Tuning of Nickel Silicide on Epitaxial Silicon-Carbon Films with High Substitutional Carbon Content
P. S. Y. Lim1, R. T. P. Lee1, A. E. J. Lim1, A. T. Y. Koh1, M. Sinha1, D. Z. Chi2, Y. C. Yeo1(1.National Univ. of Singapore, 2.Inst. of Materials Res. and Eng., Singapore)
