2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-7-2]Additive Process Induced Strain (APIS) Technology for Lg = 30nm Band-Edge High-k/Metal Gate nMOSFET
M. M. Hussain1, K. Rader2, C. Smith3, C. Young1, S. Suthram4, C. Park1, M. Cruz1, P. D. Kirsch1, R. Jammy5(1.SEMATECH, 2.Texas State Univ., 3.Univ. of North Texas, 4.Univ. of Florida, 5.IBM Assignee, USA)
