2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-7-4]Vfb Lowering Effect of TaC/Rare Earth Metal/TaC Laminated Gate Electrode Applicable to N-MISFET with HfSiON and its Physical Origins before and after High-Temperature Annealing
R. Ichihara1, M. Koyama1(1.Toshiba Corp., Japan)
