2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-9-5]Extended EOT Scalability of HfON/SiON Gate Stack Down to 0.57 nm with High Carrier Mobility by Post-Deposition Annealing
D. Ishikawa1, S. Kamiyama1, E. Kurosawa1, T. Aoyama1, Y. Nara1(1.Selete, Japan)
