2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-1-3]High Mobility sub-60nm Gate Length Germanium-On-Insulator Channel pMOSFETs with Metal Source/Drain and TaN MIPS Gate
K. Ikeda1, Y. Yamashita1, M. Harada1, T. Yamamoto1, S. Nakaharai1, N. Hirashita1, Y. Moriyama1, T. Tezuka1, N. Taoka2, I. Watanabe3, N. Hirose3, N. Sugiyama1, S. Takagi2,4(1.MIRAI-ASET, 2.MIRAI-ASRC, 3.NICT, 4.Univ. of Tokyo, Japan)
