International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-1-4]Evaluation of Electron and Hole Mobility at Identical MOS Interfaces by using Metal Source/Drain GOI MOSFETs

K. Morii¹, S. Dissanayake¹, S. Tanabe¹, R. Nakane¹, M. Takenaka¹, S. Sugahara², S. Takagi¹(1.Univ. of Tokyo, 2.Tokyo Tech., Japan)

https://doi.org/10.7567/SSDM.2008.B-1-4