2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-2-4]Advantages of Densely Packed Multi-Wire Transistors with a Planar Gate Structure and a Low-k Buried Insulator over Planar SOI Devices
M. Ono1, K. Uchida2, T. Tezuka1(1.Toshiba Corp., 2.Tokyo Tech., Japan)
