2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-3-2]Physical and Electrical Design of FinFET based SRAM Bitcell for 22nm Node and Below
S. C. Song1, M. Abu-Rahma1, B. M. Han1, S. S. Yoon1, J. Wang1, W. Yang2, C. Hu2, G. Yeap1(1.Qualcomm Inc., 2.Univ. of California Berkeley, USA)
