2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-3-4]Erbium/Platinum Silicided Gate-All-Around Silicon Nanowire Schottky Source/Drain MOSFETs
E. J. Tan1,2,3, K. L. Pey1, N. Singh2, G. Q. Lo2, D. Z. Chi3, Y. K. Chin1, L. J. Tang2(1.Nanyang Technological Univ., 2.Inst. of Microelectronics, 3.Inst. of Materials Res. and Eng., Singapore)
