2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-3-5L]Principal Guideline of Stress Design Engineering for Drivability Enhancement and Suppression of Variability in PMOSFET with SiGe S/D
M. Nishikawa1, N. Tamura2, Y. Shimamune2, A. Hatada1, K. Ikeda2, T. Yamamoto2, T. Miyashita2, Y. S. Kim2, T. Kubo1, T. Sukegawa1, M. Fukuda1, K. Sukegawa2, H. Kurata2, M. Kase1, K. Hashimoto1(1.Fujitsu Microelectronics Ltd., 2.Fujitsu Labs. Ltd., Japan)
