2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-5-1]Design and Optimization of Gate Sidewall Spacers to Achieve 45nm Ground Rule for High-performance Applications
T. Miyashita1, K. Ookoshi2, A. Hatada2, K. Ikeda1, Y. S. Kim1, M. Nishikawa2, T. Sakoda1, K. Hosaka1, H. Kurata1(1.Fujitsu Labs. Ltd., 2.Fujitsu Microelectronics Ltd., Japan)
