2016 International Conference on Solid State Devices and Materials
Sep 26 - Sep 29, 2016Tsukuba International Congress Center, Tsukuba, Japan
2016 International Conference on Solid State Devices and Materials
Sep 26 - Sep 29, 2016Tsukuba International Congress Center, Tsukuba, Japan
[A-2-01(Invited)]Experimental Demonstration of Negative Capacitance epi-Ge/Si FETs with Ferroelectric Hf-based Oxide Gate Stack for Swing Sub-60mV/dec and Hysteresis-Free
○M. H. Lee1, P. G. Chen1,2, C. Liu3, K. T. Chen4, M. J. Xie1, S. N. Liu1, H. H. Chen1, C. H. Tang1, J. W. Lee1, W. H. Tu2, K. S. Li5, M. C. Chen5, M. H. Liao2, C. Y. Chang3,6, C. H. Cheng1, S. T. Chang4, C. W. Liu2(1.National Taiwan Normal Univ.(Taiwan), 2.National Taiwan Univ.(Taiwan), 3.NCTU(Taiwan), 4.National Chung Hsing Univ.(Taiwan), 5.National Nano Device Lab.(Taiwan), 6.Academia Sinica(Taiwan))
