2016 International Conference on Solid State Devices and Materials
Sep 26 - Sep 29, 2016Tsukuba International Congress Center, Tsukuba, Japan
2016 International Conference on Solid State Devices and Materials
Sep 26 - Sep 29, 2016Tsukuba International Congress Center, Tsukuba, Japan
[A-2-02]Advantages of Silicon-on-Insulator FETs over FinFETs in Steep Subthreshold Swing Operation in Ferroelectric Gate FETs
○H. Ota1, S. Migita1, J. Hattori1, K. Fukuda1, A. Toriumi2(1.AIST(Japan), 2.Univ. of Tokyo(Japan))
