2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

Sep 26 - Sep 29, 2016Tsukuba International Congress Center, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

Sep 26 - Sep 29, 2016Tsukuba International Congress Center, Tsukuba, Japan

[A-2-04]Effects of Impurity and Composition Profile Steepness on Electrical Characteristics of GaAsSb/InGaAs Hetero-junction Vertical TFETs

○T. Gotow1,3, M. Mitsuhara2,3, T. Hoshi2,3, H. Sugiyama2,3, M. Takenaka1,3, S. Takagi1,3(1.Univ. of Tokyo(Japan), 2.NTT Device Tech. Labs.(Japan), 3.JST-CREST(Japan))
https://doi.org/10.7567/SSDM.2016.A-2-04
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