2016 International Conference on Solid State Devices and Materials
Sep 26 - Sep 29, 2016Tsukuba International Congress Center, Tsukuba, Japan
[A-3-03]On the Drain Bias Dependence of Tunnel FETs
○K. Fukuda1, T. Mori1, H. Asai1, J. Hattori1, W. Mizubayashi1, Y. Morita1, H. Fuketa1, S. Migita1, H. Ota1, M. Masahara1, K. Endo1, T. Matsukawa1(1.AIST(Japan))