2016 International Conference on Solid State Devices and Materials
Sep 26 - Sep 29, 2016Tsukuba International Congress Center, Tsukuba, Japan
2016 International Conference on Solid State Devices and Materials
Sep 26 - Sep 29, 2016Tsukuba International Congress Center, Tsukuba, Japan
[A-5-04]On the Characterization of Hot Carrier Effect in Fully Depleted SOI and GeOI MOSFETs under Circuit-Speed Random Stress
○R. Cheng1, W. Chen1, D. -W. Wang1, J. Lu2, R. Zhang1, W. -Y. Yin1, Y. Zhao1(1.Zhejiang Univ.(China), 2.Hunan Univ.(China))
