[A-1-02]Critical Impact of Ferroelectric-Phase Formation Annealing on MFIS Interface of HfO2-Based Si FeFETs
〇Kasidit Toprasertpong1, Kento Tahara1, Taichiro Fukui1, Zaoyang Lin1, Kouhei Watanabe1, Mitsuru Takenaka1, Shinichi Takagi1(1. Univ. of Tokyo(Japan))
