2020 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2020
2020 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2020
[A-1-06]Design and Simulation of Highly-Efficient Metal-Ferroelectric-Nanosheet Line-Tunnel FETs for Sub-5-nm Technology Nodes
〇Narasimhulu Thoti1, Yiming Li Li1, Sekhar Reddy Kola1, Seiji Samukawa2(1. National Chiao Tung Univ.(Taiwan), 2. Tohoku Univ.(Japan))
