2020 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2020
2020 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2020
[A-4-02 (Late News)]Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities
〇Hiroki Kanakogi1, Wei-Chen Wen1, Keisuke Yamamoto1, Dong Wang1, Hiroshi Nakashima2(1. Interdisciplinary Graduate School of Engineering Sci., Kyushu Univ.(Japan), 2. Global Innovation Center, Kyushu Univ.(Japan))
