2020 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2020
2020 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2020
[A-6-04]Chemical Structure of SiN Films Deposited on High Aspect Trench by Plasma Enhanced Atomic Layer Deposition
〇Tappei Nishihara1, Ryo Yokogawa1,2, Yuji Otsuki3, Munehito Kagaya3, Atsushi Ogura2,1(1. Meiji Univ.(Japan), 2. Meiji Renewable Energy Lab.(Japan), 3. Tokyo Electron Technology Solutions Ltd.(Japan))
