[A-6-05]Millisecond Post Deposition Annealing for Improving the EOT and Dit in TiN/HfO2/SiO2/Si Gate Stacks using Flash Lamp Annealing
〇Hikaru Kawarazaki1, Akitsugu Ueda1, Shinichi Kato1, Kento Izumi2, Yasuo Nara2(1. SCREEN Semiconductor Solutions Co., Ltd.(Japan), 2. Univ. of Hyogo(Japan))
