2020 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2020
2020 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2020
[A-6-06]ON current enhancement and single-electron transport in tunnel FETs by a new isoelectronic trap impurity of beryllium
〇Yoshisuke Ban1, Kimihiko Kato2, Shota Iizuka2, Satoshi Moriyama3, Koji Ishibashi1, Keiji Ono1, Takahiro Mori2(1. RIKEN(Japan), 2. AIST(Japan), 3. Tokyo Denki Univ. (TDU)(Japan))
