2020 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2020
2020 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2020
[B-2-01]Impact of Zr Concentration on Time-Dependent Dielectric Breakdown of HfZrO-based Ferroelectric Tunnel Junction (FTJ) Memory
〇Marina Yamaguchi1, Kensuke Ota1, Shosuke Fujii1, Reika Ichihara1, Kazuhiro Matsuo1, Kota Takahashi1, Yuta Kamiya1, Masumi Saitoh1(1. Kioxia Corp.(Japan))
