[D-8] Processes and Characterization

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[D-8-01] Low-damage gate-recess wet etching for AlGaN/GaN heterostructure via removal of altered layer obtained by Ti-AlGaN reaction

〇Jieensi Gelan¹, Yuchen Deng¹, Junewoo Choi¹, Kazuya Uryu^1,2, Toshi-kazu Suzuki¹ (1. Japan Advanced Institute of Science and Technology (Japan), 2. Advantest Laboratories Ltd. (Japan))

Password required to view