2024 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation04: Power / High‐speed Devices and Materials

[D-8]Processes and Characterization

Wed. Sep 4, 2024 3:15 PM - 4:15 PM JST
Wed. Sep 4, 2024 6:15 AM - 7:15 AM UTC
Room D (Medium Hall)(2nd Floor)
Session Chair: Taro Nishiguchi (Sumitomo Electric Industries, Ltd.), Joel Asubar (Fukui Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[D-8-01]Low-damage gate-recess wet etching for AlGaN/GaN heterostructure via removal of altered layer obtained by Ti-AlGaN reaction

〇Jieensi Gelan1, Yuchen Deng1, Junewoo Choi1, Kazuya Uryu1,2, Toshi-kazu Suzuki1 (1. Japan Advanced Institute of Science and Technology (Japan), 2. Advantest Laboratories Ltd. (Japan))
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[D-8-02]Measurement of Temperature-Dependent Interfacial Thermal Resistance at polymer/SiC Interface Based on Optical-Interference Contactless Thermometry

〇Jiawen Yu1, Hiroaki Hanafusa1, Seiichiro Higashi1 (1. Hiroshima Univ. (Japan))
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[D-8-03]Comparison of Single Shockley-Type Stacking Fault Expansion Rates in 4H-SiC under Ultraviolet Illumination after Hydrogen or Fluorine Ion Implantation

〇Johji Nishio1, Chiharu Ota1, Ryosuke Iijima1 (1. Toshiba Corp. (Japan))
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[D-8-04]Dynamics of Hopping of Surface Trapped Electrons on GaN High Electron Mobility Transistors Observed by Operando X-ray Photoelectron Nanospectroscopy

Keiichi Omika1, Yasunori Tateno2, Tsuyoshi Kouchi2, Naoka Nagamura3, Koji Horiba4, Masaharu Oshima5, Maki Suemitsu1, 〇Hirokazu Fukidome1 (1. Research Institute of Electrical Communication, Tohoku University (Japan), 2. Sumitomo Electric Industries, Ltd. (Japan), 3. National Institute for Materials Science (Japan), 4. Photon Factory, High Energy Accelerator Research Organization (Japan), 5. Institute for Solid State Physics, The University of Tokyo (Japan))
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