[B-3] Ferroelectric Devices

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[B-3-01 (Invited)] HfO₂-based Ferroelectric Devices for Edge AI Application

〇Jun Okuno¹, Yusuke Shuto¹, Kensuke Ota¹, Tsubasa Yonai¹, Ryo Ono¹, Masaki Sakakibara¹, Akihiko Kato¹, Maximilian Lederer², Peter Reinig², Konrad Seidel², Ruben Alcala³, Uwe Schroeder³, Thomas Mikolajick³, Taku Umebayashi¹, Kentaro Akiyama¹ (1. Sony Semiconductor Solutions Corp. (Japan), 2. Fraunhofer IPMS - Center Nanoelectronics Technologies (Germany), 3. NaMLab gGmbH (Germany))