Presentation Information
[PS-02-02]A Novel Hybrid 1T U-MOSFET/TFET Memory Cell with 5-ns Programming, >100-ms Retention, and >109 Endurance Cycles
〇Hang Xu1, Jianbin Guo1, Peng Liao1, Yanghao Wang1, Yafen Yang1, Qingqing Sun1, David wei Zhang1 (1. Fudan University (China))