Presentation Information

[SO-PS-11-10]C-V characteristics of Mg2Si graded pn junction fabricated by Ag thermal diffusion on n-type Mg2Si substrate.

〇Hibiki Katsumata1, Ryosuke Furuta1, Kosuke Shimano1, Shunya Sakane1, Haruhiko Udono1 (1. The Univ. of Ibaraki (Japan))