ICSCRM2019
2019年9月29日〜10月4日Kyoto International Conference Center
ICSCRM2019
2019年9月29日〜10月4日Kyoto International Conference Center
[Mo-1A-03]Performace Improvement of Trench Gate SiC MOSFET by Localized High-Concentration N-Type Ion Implantation
*Rina Tanaka1, Katsutoshi Sugawara2, Yutaka Fukui1, Hideyuki Hatta1, Hidenori Koketsu1, Hiroyoshi Suzuki2, Yusuke Miyata1, Kensuke Taguchi2, Yasuhiro Kagawa2, Shingo Tomohisa1, Naruhisa Miura1(1. Advanced Technology R&D Center, Mitsubishi Electric Corp.(Japan), 2. Power Device Works, Mitsubishi Electric Corp.(Japan))