ICSCRM2019
2019年9月29日〜10月4日Kyoto International Conference Center
ICSCRM2019
2019年9月29日〜10月4日Kyoto International Conference Center
[Mo-2A-04]Nitridation of SiC surfaces by H2/N2 treatment
*Koichi Murata1, Daisuke Mori2, Aki Takigawa2, Hidekazu Tsuchida1(1. Central Research Institute of Electric Power Industry (CRIEPI)(Japan), 2. Fuji Electric Co., Ltd.(Japan))