ICSCRM2019
2019年9月29日〜10月4日Kyoto International Conference Center
ICSCRM2019
2019年9月29日〜10月4日Kyoto International Conference Center
[Mo-2A-05]Reduction of Interface States in 4H-SiC/SiO2 near both Conduction and Valence Band Edges by High-temperature Nitrogen Annealing
*Keita Tachiki1, Tsunenobu Kimoto1(1. Kyoto Univ.(Japan))