ICSCRM2019
2019年9月29日〜10月4日Kyoto International Conference Center
ICSCRM2019
2019年9月29日〜10月4日Kyoto International Conference Center
[Tu-2B-03]Growth and Characterization of Al-Doped p-type 4H-SiC Grown by PVT
*Kazuma Eto1, Hiromasa Suo1,2, Tomohisa Kato1, Hajime Okumura1(1. National Institute of Advanced Industrial Science and Technology (AIST)(Japan), 2. Showa Denko K. K.(Japan))