応用物理学会春季・秋季学術講演会

Semiconductor nanowires (NWs) offer the possibility of reducing the footprint of devices for 3D integration and enduring large lattice mismatch for breaking the limitation of material combination. Telecom-band NW lasers are extremely important for optical data communication, spectroscopy, and medical diagnosis. Although ultraviolet, visible, and near-infrared NW lasers have been demonstrated, room-temperature (RT) telecom-band NW lasers have not been realized due to the material issues. Recently we have demonstrated telecom-band (1.5-1.6 µm) NW lasers at RT by using multi-stacked InP/InAs heterostructure NWs [1]. The high controllability of synthesis approach enables one to tune the emission wavelength in a wide range through quantum confinement effect [2]. Hence this provides a high potential to realize the function of wavelength modulation in the whole telecom-band window. Here we report the controllable wavelength in 1.2-1.6 µm in the InP/InAs heterostructure NW laser by tuning the flow rates of the source materials of indium and arsenic.
This work was supported by JSPS KAKENHI (15H05735 and 16H03821).