2020年第81回応用物理学会秋季学術講演会
2020年9月8日〜9月11日オンライン開催
2020年第81回応用物理学会秋季学術講演会
2020年9月8日〜9月11日オンライン開催
[8p-Z22-1]High thermoelectric performance of Si-Ge alloy by modifying the electronic structure
〇(PC)Omprakash Muthusamy1、Saurabh Singh1,3、Masahiro Adachi2、Yoshiyuki Yamamoto2、Tsunehiro Takeuchi1,3,4,5(1.Toyota Tech. Inst、2.Sumitomo Ele. Ind.、3.CREST、4.MIRAI、5.Nagoya Univ.)
In order to improve the figure of merit ZT, many strategies have been reported. For example, the nano-structuring and modulation doping approach has been utilized to improve the thermoelectric properties of Si-Ge alloy by decreasing thermal conductivity without degrading the power factor.
Our previous studies revealed that the B-doped Si-Ge-Au thin film and bulk sample possessed a ZT value of 1.38 and 1.63 at 1000K. We found that the electron transport properties were constructively improved using Au-doping to form an impurity state near the valence band top, and B-doping to control the Fermi level. Very small thermal conductivity ~ 1.5 Wm-1K-1 was obtained due to nanograins. However, Au is an expensive element, and more than ZT = 1.63 is required for improving efficiency. In the present study, we synthesized bulk noncrystalline B-doped Si-Ge alloy with other metal substitution, which is a cheap and non-toxic element. Thermoelectric properties (TE) of bulk nanocrystalline samples were investigated as a function of temperature 300 – 1000 K, respectively.
Our previous studies revealed that the B-doped Si-Ge-Au thin film and bulk sample possessed a ZT value of 1.38 and 1.63 at 1000K. We found that the electron transport properties were constructively improved using Au-doping to form an impurity state near the valence band top, and B-doping to control the Fermi level. Very small thermal conductivity ~ 1.5 Wm-1K-1 was obtained due to nanograins. However, Au is an expensive element, and more than ZT = 1.63 is required for improving efficiency. In the present study, we synthesized bulk noncrystalline B-doped Si-Ge alloy with other metal substitution, which is a cheap and non-toxic element. Thermoelectric properties (TE) of bulk nanocrystalline samples were investigated as a function of temperature 300 – 1000 K, respectively.