[Session_7-04]Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H)
*Christoph Wilhelmer1,2, Dominic Waldhoer2, Diego Milardovich2, Michael Waltl1, Tibor Grasser2(1. Christian Doppler Lab. for Single-Defect Spectroscopy in Semiconductor Devices at the Inst. for Microelectronics, 2. Inst. for Microelectronics, Technische Univ. Wien)
