1976 International Conference on Solid State Devices

1976 International Conference on Solid State Devices

1976年9月1日〜9月3日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1976 International Conference on Solid State Devices

1976 International Conference on Solid State Devices

1976年9月1日〜9月3日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-3-1]CHARACTERISTICS OF THE INDIUM- AND GALLIUM-DOPED SILICON INFRARED SENSING MOSFET's (IRFET's)

L. Forbes、K. W. Loh、L. L. Wittmer(1.Department of Electrical Engineering University of California、2.Department of Electrical Engineering University of Arkansas)
https://doi.org/10.7567/SSDM.1976.B-3-1
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