1982 International Conference on Solid State Devices

1982 International Conference on Solid State Devices

1982年8月24日〜8月26日Sunshine City Prince Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1982 International Conference on Solid State Devices

1982 International Conference on Solid State Devices

1982年8月24日〜8月26日Sunshine City Prince Hotel, Tokyo, Japan

[C-2-4]Modified Schottky Barrier Heights by Interfacial Doped Layers: MBE Al on GaAs

Stephen J. Eglash、Shihong Pan、Dang Mo、William E. Spicer、Douglas M. Collins(1.Stanford Electronics Laboratories, Stanford University、2.Solid State Laboratory, Hewlett-Packard Laboratories)
https://doi.org/10.7567/SSDM.1982.C-2-4
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