1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan

[B-1-2]Nearly-Dislocation-Free, Semi-Insulating GaAs Grown in B2O3 Encapsulant

Hideo Nakanishi、Hiroki Kohda、Kohji Yamada、Keigo Hoshikawa(1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)
https://doi.org/10.7567/SSDM.1984.B-1-2
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