1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan

[B-2-5]Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon

Shoji SHUKURI、Yasuo WADA、Masao TAMURA、Hiroo MASUDA、Tohru ISHITANI(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1984.B-2-5
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