1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan

[B-3-2]Interface-Trap Generation Modeling of Fowler-Nordheim Tunnel Injection into Ultrathin Gate Oxide

S. Horiguchi、T. Kobayashi、K. Saito(1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)
https://doi.org/10.7567/SSDM.1984.B-3-2
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