1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan

[C-2-2]Monolithic Integration of InGaAsP/InP Laser Diode with Heterojunction Bipolar Transistors

Jun Shibata、Yoichi Sasai、Ichiro Nakao、Soichi Kimura、Nobuyasu Hase、Hiroyuki Serizawa(1.Central Research Laboratory Matsushita Electric Industrial Co., Ltd.)
https://doi.org/10.7567/SSDM.1984.C-2-2
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