1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan

[C-3-5]Dependence of Threshold Current on Wavelength and Temperature in 1.3-μm GaInAsP/InP DFB Lasers

Y. Uematsu、H. Okuda、Y. Hirayama、H. Furuyama(1.Toshiba Research & Development Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1984.C-3-5
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