1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan

[D-2-4]Characterization of Residual Stress in Semi-Insulating GaAs:Cr by Photoluminescence Method

Y. FUJIWARA、A. KOJIMA、T. NISHINO、Y. HAMAKAWA、K. YASUTAKA、M. UMENO、H. KAWABE(1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University、2.Department of Precision Engineering, Faculty of Engineering, Osaka University)
https://doi.org/10.7567/SSDM.1984.D-2-4
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