1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan

[D-3-2]Schottky Characteristics and Interfacial Defects in Tungsten Silicide/GaAs and Palladium/GaAs Systems

T. Makimoto、M. Taniguchi、K. Ogiwara、T. Ikoma、T. Okumura(1.Institute of Industrial Science, University of Tokyo、2.Tokyo Metropolitan University)
https://doi.org/10.7567/SSDM.1984.D-3-2
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