1984 International Conference on Solid State Devices and Materials
1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan
1984 International Conference on Solid State Devices and Materials
1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan
[D-3-3]Electrical Properties of Surface Defects on Molecular Beam Epitaxially Grown GaAs Layers and Defect Free Growth Procedures
Masanori Shinohara、Tomonori Ito、Kazumi Wada、Yoshihiro Imamura(1.Atsugi Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)
