1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜9月1日International Conference Center Kobe, Kobe, Japan

[D-3-4]Initial Oxidation Stage of AlxGa1-xAs and (Al, Ga)0.5In0.5P Surfaces Studied by Photoemission Spectroscopy

Toshitaka TORIKAI、Masaki OGAWA(1.Opto-Electronics Research Laboratories, Fundamental Research、2.Laboratories, NEC Corporation)
https://doi.org/10.7567/SSDM.1984.D-3-4
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