1985 Conference on Solid State Devices and Materials

1985 Conference on Solid State Devices and Materials

1985年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1985 Conference on Solid State Devices and Materials

1985 Conference on Solid State Devices and Materials

1985年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[A-1-2]Hot Carrier Degradation Mechanism in Si nMOSFETs

T. Tsuchiya、T. Kobayashi、S. Nakajima(1.NTT Atsugi Electrical Communication Laboratories)
https://doi.org/10.7567/SSDM.1985.A-1-2
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