1985 Conference on Solid State Devices and Materials

1985 Conference on Solid State Devices and Materials

1985年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1985 Conference on Solid State Devices and Materials

1985 Conference on Solid State Devices and Materials

1985年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[A-2-5]Effect of Grain Boundaries on the I-V Characteristics of P-Channel MOSFET/SOI

T. Nishimura、K. Sugahara、S. Kusunoki、Y. Akasaka(1.LSI Research and Development Laboratory Mitsubishi Electric Corporation)
https://doi.org/10.7567/SSDM.1985.A-2-5
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