1985 Conference on Solid State Devices and Materials

1985 Conference on Solid State Devices and Materials

1985年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1985 Conference on Solid State Devices and Materials

1985 Conference on Solid State Devices and Materials

1985年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-1-10]Efficient Far Infrared Emission from Electrically Excited Surface Plasmon in Modulation-Doped AlGaAs-GaAs Heterointerface

Yasuo Sambe、Nobuyuki Okisu、Keiichi Suehiro、Takeshi Kobayashi、Kazuo Fujisawa、Takashi Tomita、Takeshi Sakurai(1.Faculty of Engineering Science, Osaka University、2.Faculty of Engineering, Osaka Industrial University、3.VLSI Research Laboratories, Sharp Corporation)
https://doi.org/10.7567/SSDM.1985.B-1-10
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