1985 Conference on Solid State Devices and Materials

1985 Conference on Solid State Devices and Materials

1985年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1985 Conference on Solid State Devices and Materials

1985 Conference on Solid State Devices and Materials

1985年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-1-3]Mode Properties of MOCVD Grown High Power GaAlAs Lasers

H. Nagasaka、M. Okajima、N. Shimada、Y. Iizuka、N. Motegi(1.Research & Development Center, Toshiba Corp.、2.Semiconductor Division, Toshiba Corp.)
https://doi.org/10.7567/SSDM.1985.B-1-3
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